IndiumV3, Russie, Analysis, bibRecord, 000239

Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

Identifieur interne : 000239 ( Russie/Analysis ); précédent : 000238; suivant : 000240

Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

Auteurs : RBID : Pascal:07-0403025

Descripteurs français

Pascal (Inist)
- Etude théorique, Méthode MOVPE, Epitaxie phase vapeur, Mécanisme croissance, Processus fabrication, Pastille électronique, Semiconducteur III-V, Composé III-V, Effet pression, Phase gazeuse, Nucléation, Flexibilité, Simulation ordinateur, Nitrure, Gallium nitrure, Indium nitrure, GaN, InGaN, 8115K, 8110A, 6460Q.

English descriptors

KwdEn :
- Computerized simulation, Flexibility, Gallium nitrides, Gas phase, Growth mechanism, III-V compound, III-V semiconductors, Indium nitrides, MOVPE method, Nitrides, Nucleation, Pressure effects, Production process, Theoretical study, VPE, Wafers.

Abstract

The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42 x 2" Planetary Reactor®.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 007578
to stream Main, to step Repository: 007528
to stream Russie, to step Extraction: 000239

Links to Exploration step

Pascal:07-0403025

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®</title>
<author><name sortKey="Martin, C" uniqKey="Martin C">C. Martin</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>AIXTRON AG, Kackertstr. 15-17</s1>
<s2>52072 Aachen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region>
<region type="district" nuts="2">District de Cologne</region>
<settlement type="city">Aix-la-Chapelle</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Dauelsberg, M" uniqKey="Dauelsberg M">M. Dauelsberg</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>AIXTRON AG, Kackertstr. 15-17</s1>
<s2>52072 Aachen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region>
<region type="district" nuts="2">District de Cologne</region>
<settlement type="city">Aix-la-Chapelle</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Protzmann, H" uniqKey="Protzmann H">H. Protzmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>AIXTRON AG, Kackertstr. 15-17</s1>
<s2>52072 Aachen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region>
<region type="district" nuts="2">District de Cologne</region>
<settlement type="city">Aix-la-Chapelle</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Boyd, A R" uniqKey="Boyd A">A. R. Boyd</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Thomas Swan Ltd., Buckingway Business Park</s1>
<s2>Cambridge CB4 5FQ</s2>
<s3>GBR</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Cambridge CB4 5FQ</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Thrush, E J" uniqKey="Thrush E">E. J. Thrush</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Thomas Swan Ltd., Buckingway Business Park</s1>
<s2>Cambridge CB4 5FQ</s2>
<s3>GBR</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Cambridge CB4 5FQ</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Heuken, M" uniqKey="Heuken M">M. Heuken</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>AIXTRON AG, Kackertstr. 15-17</s1>
<s2>52072 Aachen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region>
<region type="district" nuts="2">District de Cologne</region>
<settlement type="city">Aix-la-Chapelle</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Talalaev, R A" uniqKey="Talalaev R">R. A. Talalaev</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Semiconductor Technology Research GmbH, PO Box 1207</s1>
<s2>91002 Erlangen</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<wicri:noRegion>91002 Erlangen</wicri:noRegion>
<wicri:noRegion>PO Box 1207</wicri:noRegion>
<wicri:noRegion>91002 Erlangen</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yakovlev, E V" uniqKey="Yakovlev E">E. V. Yakovlev</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Soft Impact Ltd., PO Box 83</s1>
<s2>194156 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194156 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kondratyev, A V" uniqKey="Kondratyev A">A. V. Kondratyev</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Soft Impact Ltd., PO Box 83</s1>
<s2>194156 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194156 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">07-0403025</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0403025 INIST</idno>
<idno type="RBID">Pascal:07-0403025</idno>
<idno type="wicri:Area/Main/Corpus">007578</idno>
<idno type="wicri:Area/Main/Repository">007528</idno>
<idno type="wicri:Area/Russie/Extraction">000239</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computerized simulation</term>
<term>Flexibility</term>
<term>Gallium nitrides</term>
<term>Gas phase</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>MOVPE method</term>
<term>Nitrides</term>
<term>Nucleation</term>
<term>Pressure effects</term>
<term>Production process</term>
<term>Theoretical study</term>
<term>VPE</term>
<term>Wafers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude théorique</term>
<term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Mécanisme croissance</term>
<term>Processus fabrication</term>
<term>Pastille électronique</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Effet pression</term>
<term>Phase gazeuse</term>
<term>Nucléation</term>
<term>Flexibilité</term>
<term>Simulation ordinateur</term>
<term>Nitrure</term>
<term>Gallium nitrure</term>
<term>Indium nitrure</term>
<term>GaN</term>
<term>InGaN</term>
<term>8115K</term>
<term>8110A</term>
<term>6460Q</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42 x 2" Planetary Reactor®.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>303</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the fifth international workshop on modeling in crystal growth (IWMCG-5), 10-13 september 2006, Bamberg, Germany</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MARTIN (C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DAUELSBERG (M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>PROTZMANN (H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BOYD (A. R.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>THRUSH (E. J.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HEUKEN (M.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>TALALAEV (R. A.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>YAKOVLEV (E. V.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>KONDRATYEV (A. V.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>MÜLLER (Georg)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>FRIEDRICH (Jochen)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>AIXTRON AG, Kackertstr. 15-17</s1>
<s2>52072 Aachen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Thomas Swan Ltd., Buckingway Business Park</s1>
<s2>Cambridge CB4 5FQ</s2>
<s3>GBR</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Semiconductor Technology Research GmbH, PO Box 1207</s1>
<s2>91002 Erlangen</s2>
<s3>DEU</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Soft Impact Ltd., PO Box 83</s1>
<s2>194156 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>University Erlangen-Nuremberg</s1>
<s2>Erlangen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Fraunhofer IISB</s1>
<s2>Erlangen</s2>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>German Association of Crystal Growth (DGKK)</s1>
<s3>DEU</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>318-322</s1>
</fA20>
<fA21><s1>2007</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000149521890560</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>15 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>07-0403025</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42 x 2" Planetary Reactor®.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15K</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A10A</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60D60Q</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude théorique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Theoretical study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>VPE</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Processus fabrication</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Production process</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Proceso fabricación</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Pastille électronique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Wafers</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Effet pression</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Pressure effects</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Phase gazeuse</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gas phase</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Nucléation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Nucleation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Flexibilité</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Flexibility</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Simulation ordinateur</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Computerized simulation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Nitrure</s0>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Nitrides</s0>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8115K</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>6460Q</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>260</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International workshop on modeling in crystal growth</s1>
<s2>5</s2>
<s3>Bamberg DEU</s3>
<s4>2006-09-10</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

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Abstract

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